High-ohmic resistors fabricated by PureB layer for silicon drift detectors applications

• Fabrication of high-ohmic resistors using pure boron layer deposition.
• Fabrication process is reproducible and IC compatible.
• Resistors are reproducible, linear, bias-independent.
• Resistors have low temperature coefficients low tolerances.
• Resistors are integrated in the silicon drift detectors fabrication flow.

In this paper we report a novel process to fabricate high-ohmic resistors using pure boron (PureB) depositions to create a p-type conductive layer on n-type silicon substrate. Sheet resistance values in the 100 kΩ/□ range are achieved using a reproducible and IC compatible process. The resistors made in this material are linear, bias-independent for the voltage ranges as high as 100 V, low temperature coefficients of a few hundred ppm/°C and less than 1% tolerances. As an application, these resistors are integrated in the silicon drift detectors fabrication flow as voltage divider for the drift of electrons, successfully.