Solution based-spin cast processed organic bistable memory device

A two terminal organic bistable memory was fabricated by solution based spin casting of thin films of poly-[2-methoxy-5-(2′-ethyl-hexyloxy)-1,4-phenylenevinylene] (MEHPPV):ZnO nanoparticles onto ITO coated glass. The morphology of the thin films were characterized by Raman and FTIR spectroscopies. The electrical characterization showed that the two-terminal device exhibited excellent switching characteristics with ON/OFF ratio greater than 1 × 104 when the voltage was swept between −1 V and +1 V. The device maintained its state even after removal of the bias voltage. The device exhibited stable performance at various performance tests. Two distinct capacitance states with hysteresis were observed and we suggest that the switching mechanism involved could be attributed to trapping and detrapping of electrons.

► The voltage was swept in between −1 V and 1 V for device.
► The device exhibited an ON/OFF ratio greater than 104.
► Raman mapping of the device surface shows good dispersion of the ZnO material in the polymer matrix.
► Good retention test measurements were achieved at a constant bias voltage of 0.2 V for 1 h at 160 °C.