کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
747821 | 1462251 | 2013 | 6 صفحه PDF | دانلود رایگان |
A detailed characterization and modeling of the low frequency noise in a CMOS inverter is presented for the first time. A low frequency noise model for the load current and the output voltage is developed based on the carrier number fluctuations scheme. This model allows obtaining a consistent description of the noise characteristics of CMOS inverters issued from a 45 nm bulk CMOS technology. It should constitute a reliable theoretical framework for further analysis of the impact of time fluctuations on the static and dynamic operation of CMOS inverter based circuits.
► Detailed characterization of low frequency noise in a CMOS inverter.
► Low frequency noise model of load current and of output voltage based on the carrier number fluctuations scheme.
► Noise characteristics of CMOS inverters from a 45 nm bulk CMOS technology.
Journal: Solid-State Electronics - Volume 81, March 2013, Pages 151–156