Accurate analytical drain current model for a nanoscale fully-depleted SOI MOSFET

• Proposal of an accurate analytical current model for a nanoscale FD-SOI MOSFET.
• Including the robust physical models in the proposed analytical model.
• An excellent match between data based on the analytical model and experimental data.

This paper reports a closed-form analytical drain current model for a fully-depleted (FD) SOI MOSFET on the inversion region in nanoscale regime. The proposed analytical approach involves all the important physical models which are essential in the nanoscale structures. The analytical threshold voltage model is used to take into account the critical short channel effects (SCEs) for the nanoscale SOI MOSFETs. The proposed analytical drain current model considering lattice and electron temperatures, self-heating effect (SHE), nonlocal impact ionization and parasitic bipolar effect shows an excellent match with experimental data for a 40 nm node technology. The realized analytical model is suitable for analyzing the devices with short and long channel lengths and therefore it can be considered as an efficient and flexible model to accurately predict the drain current of the FD-SOI devices.

An accurate analytical model for drain current of a nanoscale FD-SOI structure on the inversion region is proposed. Including the robust physical models such as SCEs, SHE, nonlocal impact ionization, hot electron and parasitic bipolar effect, the proposed analytical model predicts the excremental data, accurately.Figure optionsDownload as PowerPoint slide