Extracting the Schottky barrier height from axial contacts to semiconductor nanowires

Geometrical and surface effects can significantly alter conduction through metal/semiconductor nanowire (NW) contacts. In this study, we use three dimensional device simulations to examine these effects in detail. Based on the results of these simulations, a methodology is proposed for the extraction of Schottky barrier heights of contacts to semiconductor nanowires. The Schottky barrier height extracted from the current–voltage (I–V) characteristics can differ from the true barrier height due to tunneling contributions localized at the metal/nanowire interface along the nanowire periphery. The outlined method is used to analyze experimental I–V   characteristics of a surround-gate axially-aligned θ-Ni2Si/n-Siθ-Ni2Si/n-Si nanowire Schottky barrier contact.