Effects of thermal annealing on structure, morphology and electrical properties of F16CuPc/α6T heterojunction thin films

We report the effects of thermal annealing on structure, morphology and electrical properties of fluorinated copper phthalocyanine (F16CuPc)/α-sexithiophene (α6T) heterojunction thin films. The morphology and structure of the thin films were examined by atomic force microscopy and X-ray diffraction techniques. The thermal annealing significantly improved α6T molecular ordering although F16CuPc molecular was slightly disordered in the thermal annealing process. The smallest full width of half maximum of the 200 diffraction lines was gained at the thermal annealing temperature of 150 °C. Similarly, ambipolar performance of the F16CuPc/α6T heterojunction transistor could be improved by the thermal annealing. At the thermal annealed temperature of 150 °C, the ambipolar device achieved high-performance with field-effect hole and electron mobilities of 8.84 × 10−3 cm2 V−1 s−1 and 1.00 × 10−2 cm2 V−1 s−1, respectively.