کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
747960 | 1462228 | 2015 | 5 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Thermal stability of amorphous InGaZnO thin film transistors passivated by AlOx layers Thermal stability of amorphous InGaZnO thin film transistors passivated by AlOx layers](/preview/png/747960.png)
• a-IGZO TFTs with different thickness passivation-layer were fabricated and measured.
• a-IGZO TFTs showed serious threshold voltage shifts at high temperature.
• A quantitative model was proposed to explain the threshold voltage shift.
• Intrinsic excitation and oxygen vacancy formation domain the threshold voltage variation.
• Oxygen vacancy generation became more difficult with thicker passivation layers.
Thermal stability of amorphous InGaZnO thin film transistors (a-IGZO TFTs) passivated by AlOx layers was investigated in this paper. The passivation-layer thickness (0–60 nm) and measurement temperature (298–573 K) were intentionally controlled to study the temperature dependent performance of a-IGZO TFTs with sputtered AlOx passivation-layers. Generally, there was a negative shift in threshold voltage under higher temperatures, which was due to thermally excited carriers through intrinsic excitation and oxygen vacancy formation. A qualitative model was proposed to effectively ascertain the aforementioned two physical mechanisms. With passivation-layer thickness decreasing oxygen vacancy formation became more and more evident while intrinsic excitation could apparently worsen the characteristics of a-IGZO TFTs under the temperature higher than 473 K. In addition, the “passivation-layer thickness effect” for thermal stability of a-IGZO TFTs was theoretically explained by the variation of defect formation energy with the device passivation-layer thickness.
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Journal: Solid-State Electronics - Volume 104, February 2015, Pages 39–43