کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
747993 1462248 2013 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Sensitivity-based investigation of threshold voltage variability in 32-nm flash memory cells and MOSFETs
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Sensitivity-based investigation of threshold voltage variability in 32-nm flash memory cells and MOSFETs
چکیده انگلیسی

We investigate variability of a 32 nm flash memory cell and of 32 nm MOSFETs with a methodology based on sensitivity analysis performed with a limited number of TCAD simulations. We show that – as far as the standard deviation of the threshold voltage is concerned – our method provides results in very good agreement with those from three-dimensional atomistic statistical simulations, with a computational burden that is orders of magnitude smaller. We show that the proposed approach is a powerful tool to understand the role of the main variability sources and to explore the device design parameter space.


► We investigate variability of a 32 nm flash memory cell and of 32 nm MOSFETs.
► Our approach obtains similar results as statistical simulations at lower computational cost.
► Sensitivity-based analysis is more convenient than statistical simulations for variability assessment.
► Sensitivity-based analysis can be included in common TCAD tools.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 84, June 2013, Pages 127–131
نویسندگان
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