کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
747997 | 1462248 | 2013 | 5 صفحه PDF | دانلود رایگان |
In this work, we study the impact of Ag doping on GeS2-based CBRAM devices employing Ag as active electrode. Several devices with Ag doping varying between 10% and 24% are extensively analyzed. First, we assess switching voltages and time-to-set as a function of Ag concentration in the electrolyte layer. Subsequently, we evaluate the two most important reliability aspects of RRAM devices: endurance and data retention at different temperatures. The results show that an increase of Ag doping in the GeS2 layer yields a strong improvement to both endurance and data retention performances. The extrapolated temperature allowing for 10 years data retention increases from 75 °C for the 10% Ag-doped sample to 109 °C for the 24% Ag-doped one.
► We fabricated CBRAM devices, employing Ag-doped GeS2 as solid electrolyte.
► Ag doping concentrations were varied between 10% and 24%.
► We assess switching voltages and time-to-set as a function of Ag concentration.
► We evaluate endurance and data retention at different temperatures.
► Increase of Ag doping in the GeS2 layer yields improvement to devices reliability.
Journal: Solid-State Electronics - Volume 84, June 2013, Pages 155–159