کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
748023 894726 2010 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Role of the substrate during pseudo-MOSFET drain current transients
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Role of the substrate during pseudo-MOSFET drain current transients
چکیده انگلیسی

Drain current transients in floating-body SOI MOSFETs are of considerable interest for possible application for capacitor-less dynamic access random memories. For maximum refresh time of such memories, it is important that the carrier lifetime in the Si film of such devices be high or the leakage current be low. We present here a detailed study, both experimental and by simulation, of the measurements of drain current transients that are commonly used to extract the carrier lifetime, using p-film-p-substrate pseudo-MOSFETs. In contrast to other papers in this field, we include the role of the substrate in such transients and find the substrate to dominate the drain current transient. Previous studies have largely neglected the substrate.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 54, Issue 3, March 2010, Pages 316–322
نویسندگان
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