The SiGeSn approach towards Si-based lasers

Approaches using lattice-matched heterostructures consisting of group-IV elements – Si, Ge, Sn and their alloys, are proposed for the development of Si-based lasers that can be monolithically integrated on Si substrate. All proposed laser structures can be deposited strain free on Si substrates with either Ge or GeSn buffer layers. Designs of double heterostructure, multiple quantum well, and quantum cascade lasers are presented.

► Lattice matched heterostructures based on SiGeSn for mid and far IR applications are proposed.
► Double heterostructure and multiple quantum well mid-IR lasers using SiGeSn are designed.
► Quantum cascade laser based operating in the L-valleys of Ge-SiGeSn is proposed.