کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
748073 | 894731 | 2009 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Closed-form partitioned gate tunneling current model for NMOS devices with an ultra-thin gate oxide
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
This paper reports a partitioned gate tunneling current model for NMOS devices with an ultra-thin-1 nm gate oxide biased in triode and saturation regions. As verified by the experimentally measured data, this partitioned gate tunneling current model based on the three-segment approach, provides an accurate prediction of the gate current for the device with a long or short channel, biased in triode and saturation regions. For a long channel device, the gate tunneling current in the pre-saturation region of the channel dominates. For the short-channel case biased in the saturation, at a large drain voltage, the gate current may become negative due to the negative voltage drop in the gate oxide near the drain.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 53, Issue 11, November 2009, Pages 1191–1197
Journal: Solid-State Electronics - Volume 53, Issue 11, November 2009, Pages 1191–1197
نویسندگان
C.H. Lin, J.B. Kuo,