Influence of device architecture on junction leakage in low-temperature process FDSOI MOSFETs

In this paper, we demonstrate low junction leakage for Fully Depleted Silicon On Insulator (FDSOI) devices fabricated with a low thermal budget (⩽650 °C), which commonly exhibit leakage problems due to the presence of defects in or close to depletion regions. We show through both experimental data and Kinetic Monte Carlo (KMC) simulations that the reduction of the film thickness and Raised Source Drain (RSD) allow the elimination of defects in critical regions in spite of the reduced thermal budget in the very early stage of the anneal. KMC simulations also show that defects are annealed-out in this critical region even for 500 °C anneals. Low temperature process appears then as a suitable process for advanced devices.