Characteristics control of room-temperature operating single electron transistor with floating gate by charge pump circuit

• A single electron transistor (SET) operating at room temperature is successfully integrated with a charge pump circuit.
• The peak of Coulomb oscillation is shifted by applying high voltage generated by the charge pump circuit at room temperature.
• This attempt will open a new path of adding new functionality to conventional MOS circuits by integration with Beyond CMOS.

A single electron transistor (SET) with floating gate, which has a non-volatile memory effect, is successfully integrated with a charge pump circuit that consists of conventional MOS circuits on the same chip. By applying high voltage generated by the charge pump circuit to SET with floating gate, characteristics control of the Coulomb blockade oscillation is demonstrated at room temperature for the first time. This attempt will open a new path of adding new functionality to conventional MOS circuits by integration with so-called “Beyond CMOS” devices.