کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
748189 | 894744 | 2008 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Fabrication and characterisation of high resistivity SOI substrates for monolithic high energy physics detectors
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Fabrication and characterisation of high resistivity SOI substrates for monolithic high energy physics detectors Fabrication and characterisation of high resistivity SOI substrates for monolithic high energy physics detectors](/preview/png/748189.png)
چکیده انگلیسی
Silicon on insulator (SOI) substrates offer a promising platform for monolithic high energy physics detectors with integrated read-out electronics and pixel diodes. This paper describes the fabrication and characterisation of specially-configured SOI substrates using improved bonded wafer ion split and grind/polish technologies. The crucial interface between the high resistivity handle silicon and the SOI buried oxide has been characterised using both pixel diodes and circular geometry MOS transistors. Pixel diode breakdown voltages were typically greater than 100Â V and average leakage current densities at 70Â V were only 55Â nA/cm2. MOS transistors subjected to 24Â GeV proton irradiation showed an increased SOI buried oxide trapped charge of only 3.45Â ÃÂ 1011Â cmâ2 for a dose of 2.7Â Mrad.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 52, Issue 12, December 2008, Pages 1849-1853
Journal: Solid-State Electronics - Volume 52, Issue 12, December 2008, Pages 1849-1853
نویسندگان
F.H. Ruddell, S.L. Suder, M.F. Bain, J.H. Montgomery, B.M. Armstrong, H.S. Gamble, D. Denvir, G. Casse, T. Bowcock, P.P. Allport, J. Marczewski, K. Kucharski, D. Tomaszewski, H. Niemiec, W. Kucewicz,