کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
748193 894744 2008 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Sensitivity of trigate MOSFETs to random dopant induced threshold voltage fluctuations
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Sensitivity of trigate MOSFETs to random dopant induced threshold voltage fluctuations
چکیده انگلیسی

In this paper, we investigate random doping fluctuation effects in trigate SOI MOSFETs by solving the three-dimensional (3D) Poisson, drift-diffusion and continuity equations numerically. A single doping impurity atom is introduced in the undoped channel region of the device and the resulting shift of threshold voltage is measured from the simulated I–V characteristics. This enables the derivation of the threshold voltage shift (ΔVTH) for any arbitrary location of the doping atom in the transistor. Based on an analysis of a sub-20 nm trigate MOSFET device, we find that the typical variation of VTH per doping atom is a few tens of mV. Inversion-mode (IM) trigate devices are more sensitive to the doping fluctuation effects than accumulation-mode (AM) devices. The threshold voltage shift arising from doping fluctuations is maximum when the doping atom is near the center of the channel region, which means the original SOI film doping, the random contamination effects or any other impurity doping in the channel region is more important than atoms introduced in the channel by the S/D implantation process for sub-20 nm transistors.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 52, Issue 12, December 2008, Pages 1872–1876
نویسندگان
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