کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
748199 | 894744 | 2008 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Substrate bias and operating temperature effects on the performance of Schottky-barrier SOI nMOSFETs
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موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Substrate bias and operating temperature effects on the performance of Schottky-barrier SOI nMOSFETs Substrate bias and operating temperature effects on the performance of Schottky-barrier SOI nMOSFETs](/preview/png/748199.png)
چکیده انگلیسی
The substrate bias and operating temperature effects on the performance of erbium-silicided Schottky-barrier SOI nMOSFETs have been studied. The temperature dependence of the threshold voltage, the current ratio of ION/IMIN, and the subthreshold swing has been investigated. From temperature dependence of the drain current, it is confirmed that the carrier transport mechanism changes from thermionic emission and tunneling at low gate voltage to drift-diffusion at the high gate voltage. By applying substrate bias voltage, the ION/IMIN ratio and subthreshold swing can be improved. By investigating the substrate bias dependence of ION/IMIN ratio, subthreshold swing, and DIBL, the optimum substrate bias voltage is suggested.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 52, Issue 12, December 2008, Pages 1910–1914
Journal: Solid-State Electronics - Volume 52, Issue 12, December 2008, Pages 1910–1914
نویسندگان
Dae Hyun Ka, Jin-Wook Shin, Won-Ju Cho, Jong Tae Park,