Substrate bias and operating temperature effects on the performance of Schottky-barrier SOI nMOSFETs

The substrate bias and operating temperature effects on the performance of erbium-silicided Schottky-barrier SOI nMOSFETs have been studied. The temperature dependence of the threshold voltage, the current ratio of ION/IMIN, and the subthreshold swing has been investigated. From temperature dependence of the drain current, it is confirmed that the carrier transport mechanism changes from thermionic emission and tunneling at low gate voltage to drift-diffusion at the high gate voltage. By applying substrate bias voltage, the ION/IMIN ratio and subthreshold swing can be improved. By investigating the substrate bias dependence of ION/IMIN ratio, subthreshold swing, and DIBL, the optimum substrate bias voltage is suggested.