کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
748200 894744 2008 9 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Temperature behavior of spiral inductors on high resistivity substrate in SOI CMOS technology
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Temperature behavior of spiral inductors on high resistivity substrate in SOI CMOS technology
چکیده انگلیسی

This paper reviews and analyzes a compact model for integrated planar spiral inductors on standard and high resistivity substrates in silicon-on-insulator (SOI) technology. The inductors have been characterized over a temperature range from 25 to 200 °C. The temperature variation of each model parameter has been investigated. It demonstrates that only the variations of the metallic losses versus temperature have to be taken into account to model properly the high frequency behavior over a wide temperature range of a spiral inductor integrated on silicon high resistivity substrate. Based on these experimental and characterization results, guidelines for practical inductor designs in RFICs for high-temperature applications are drawn.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 52, Issue 12, December 2008, Pages 1915–1923
نویسندگان
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