کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
748220 894748 2008 9 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Subthreshold characteristics of polysilicon TFTs
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Subthreshold characteristics of polysilicon TFTs
چکیده انگلیسی

A new analytical polysilicon thin film transistors (poly-Si TFTs) subthreshold current model is presented in this paper. The model is based on the surface potential in subthreshold regime. When assuming an exponential distribution of defect states density, surface potential calculation is derived by using the Lambert W function, which benefits from computational efficiency and is suitable for implementation in circuit simulation. In order to model the subthreshold characteristics, we have calculated the drain current and subthreshold swing. The subthreshold variation with temperature and kink effect is studied. The off-current around flat-band voltage is also calculated. The results are compared with the available experimental data and an excellent agreement has been obtained.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 52, Issue 5, May 2008, Pages 695–703
نویسندگان
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