کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
748233 | 894748 | 2008 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Mobility model for compact device modeling of OTFTs made with different materials
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
In this paper we present a new approach to model mobility in organic thin film transistors, OTFTs, which is used to analyze the behavior of mobility in devices made of poly(methyl methacrylate), PMMA, on poly(3-hexylthiophene), P3HT, recently reported by us. It is also used to discuss differences observed between OTFTs made with other polymers and oligomers. The method allows the calculation of the characteristic temperature and energy distribution of localized states (DOS) in the active layer, considering an exponential distribution. It is also shown that using the extracted DOS parameters as input DOS parameters in ATLAS simulator, it is possible to reproduce very well the device characteristics.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 52, Issue 5, May 2008, Pages 787–794
Journal: Solid-State Electronics - Volume 52, Issue 5, May 2008, Pages 787–794
نویسندگان
M. Estrada, I. Mejía, A. Cerdeira, J. Pallares, L.F. Marsal, B. Iñiguez,