کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
748252 | 1462250 | 2013 | 4 صفحه PDF | دانلود رایگان |
The gate voltage dependence of the Rashba effect in a p-type quantum well was investigated by using Shubnikov–de Haas measurements. The GaSb-based p-type quantum well has a large Rashba spin–orbit interaction parameter of 1.71 × 10−11 eVm for a zero gate voltage and exhibits gate controllability. We also propose a complementary logic device using n- and p-type spin transistors that simultaneously utilize charge and spin currents to improve the signal margin.
► We developed GaSb-based p-type quantum well with a large Rashba effect.
► Gate control of the Rashba effect in a p-type quantum well was investigated.
► We presented the feasibility of p-type quantum well for spin transistor.
► We propose a complementary logic device using n- and p-type spin transistors.
Journal: Solid-State Electronics - Volume 82, April 2013, Pages 34–37