کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
748259 | 1462250 | 2013 | 13 صفحه PDF | دانلود رایگان |
In this paper we present the modeling of the main current transport mechanisms in Schottky barrier (Double-Gate) MOSFET devices. A detailed way of the two-dimensional modeling approach with further analyses of the primary current components is given. Afterwards, these analyses are the basis of the development of a fully 2D compact model, which is able to predict the current behavior in reasonable device structures. A comparison and verification with TCAD simulation and measurement data is done with the evolved model current equations.
► Modeling of the main current transport mechanisms in SB-(DG)-MOSFET devices.
► A detailed 2D modeling approach with analyses of the primary components is given.
► The 2D analyses are the basis of the development of a fully 2D compact model.
► A verification with TCAD simulation and measurements is done for the evolved model.
Journal: Solid-State Electronics - Volume 82, April 2013, Pages 86–98