A continuous semi-empiric transfer characteristics model for surrounding gate undoped polysilicon nanowire MOSFETs

A new continuous semi-empiric compact model for the current transfer characteristics of surrounding gate undoped polycrystalline silicon (Poly-Si) nanowire (NW) MOSFETs is proposed. The model consists of a single equation based on the Lambert function, which contains only four parameters and is continuously valid and fully differentiable throughout weak and strong conduction regimes of operation. The model is tested on measured transfer characteristics of experimental devices. The extracted model parameters are used to generate transfer characteristics playbacks that are then compared to the measured data to validate the proposed model’s adequacy for these devices.

► A continuous semi-empiric Lambert function-based compact model is proposed for the transfer characteristics of Poly-Si NW MOSFETs.
► It consists of a single analytically differentiable equation with only four parameters.
► Its adequacy is ascertained by comparing measured characteristics of experimental devices to model play-backs calculated using extracted parameters.