کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
748273 894750 2011 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Direct parameter-extraction method for MOSFET noise model from microwave noise figure measurement
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Direct parameter-extraction method for MOSFET noise model from microwave noise figure measurement
چکیده انگلیسی

A new method for the determination of the four noise parameters of the metal oxide semiconductor field effect transistors (MOSFETs) based on the noise figure measurement system without microwave tuner is presented. The noise parameters are determined based on a set of analytical expressions of noise parameters by fitting the measured noise figure of the active device. These expressions are derived from an accurate small signal and noise equivalent circuit model, which takes into account the substrate parasitics, pad capacitances, and series inductances. On-wafer experimental verification is presented and a comparison with tuner based method is given. Good agreement is obtained between simulated and measured results for 0.5 × 5 × 16 μm, 0.35 × 5 × 16 μm and 0.18 × 5 × 16 μm (gate length × number of gate fingers × unit gate width) MOSFETs.


► We have proposed a new method for the determination of the four noise parameters of MOSFETs.
► We have derived a set of expressions for the noise parameters.
► The accuracy has been verified using different size devices.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 63, Issue 1, September 2011, Pages 42–48
نویسندگان
,