Charge carrier injection and transport associated with thermally generated cracks in a 6,13-bis(triisopropylsilylethynyl) pentacene thin-film transistor

We describe how the charge carrier injection and transport are influenced by thermal cracks in a 6,13-bis(triisopropylsilylethynyl) (TIPS) pentacene film in terms of the contact resistance and the channel resistance in a TIPS pentacene thin-film transistor (TFT). Through a post-thermal annealing (PTA) process at a certain temperature Ta, the high structural order of TIPS-pentacene molecules is produced without thermal cracks, the carrier mobility of the TIPS pentacene TFT is maximized, and both the contact resistance and the channel resistance are minimized. Our quantitative description of the relationship between the PTA treatment and the interfacial resistance behavior would provide a useful basis for understanding the thermal stability and the electrical performance of a solution-processed organic TFT.

► The effect of cracks on the charge injection and transport were described.
► Charge movement at the interface is studied in terms of interfacial resistances.
► Solution-processed organic transistors with high mobility were obtained.
► A basis for understanding the stability and electrical performance is provided.