کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
748307 | 894753 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Growth of Si crystalline in SiOx films induced by millisecond rapid thermal annealing using thermal plasma jet
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موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Si crystalline growth in SiOx films is observed by annealing the films with thermal plasma jet (TPJ) at a temperature higher than 1440 K with annealing duration ranging from 0.9 to 1.7 ms. The size of surface granular structure abruptly increases from â¼30 to â¼800 nm by annealing the films at temperatures higher than 1680 K. From the Raman scattering spectra of such large grains, it is confirmed that they have very high crystallinity with the TO phonon band width of 6.9 cmâ1 and peak position of 520.3 cmâ1. Large grains of â¼10 μm are formed by agglomeration with high temperature annealing. From SiOx films annealed at â¼1200 K, visible red photoluminescence (PL) was observed at room temperature. The peak PL wavelength of 920 nm suggests the formation of nanocrystalline Si with the size of â¼5 nm.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 52, Issue 3, March 2008, Pages 377-380
Journal: Solid-State Electronics - Volume 52, Issue 3, March 2008, Pages 377-380
نویسندگان
T. Okada, S. Higashi, H. Kaku, T. Yorimoto, H. Murakami, S. Miyazaki,