Al-Induced oriented-crystallization of Si films on quartz and its application to epitaxial template for Ge growth

We comprehensively investigate Al-induced crystallization (AIC) of Si to achieve (0 0 1) and (1 1 1)-oriented Si films on quartz substrates. These phenomena are systematically explained by ‘preferential interfacial-nucleation model’ considering the nucleation sites and the phase transition of the interfacial Al oxide layers. Moreover, we demonstrate the lateral liquid phase epitaxy of Ge by using the orientation-controlled AIC-Si films as crystal seed. This technique enables high quality hetero-epitaxy of SiGe and Ge on transparent insulating substrates.

Research highlights
► We report systematic study of Al-induced crystallization (AIC) of Si.
► We clarify AIC conditions to control preferential orientation, i.e., (1 0 0) or (1 1 1).
► We demonstrate epitaxial growth of Ge layers using AIC-Si templates.