کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
748333 | 1462266 | 2011 | 4 صفحه PDF | دانلود رایگان |

Liquid-phase epitaxial growth of Ge islands on insulator (GOI) using Ni-imprint-induced Si (1 1 1) micro-crystal seeds (∼1 μmϕ) is proposed. As a result, single-crystalline GOI (1 1 1) structures with large area (∼10 μmϕ) are realized. The transmission electron microscopy observations reveal no dislocation or stacking fault in the laterally grown regions. Moreover, the Raman measurements show that the tensile strain (∼0.2%) which enhances the carrier mobility is induced in the growth regions. This new method can be employed to realize the multi-functional SiGe large scale integrated circuits.
► Melting growth of Ge layers on insulators (GOI) is investigated.
► Ni-imprint-induced Si (1 1 1) micro-crystals are employed as seed.
► Single-crystalline GOI (1 1 1) with large area (∼10 μmϕ) is realized.
► The tensile strain (∼0.2%) which enhances the carrier mobility is induced.
► This new method can be employed to realize the multi-functional SiGe LSI.
Journal: Solid-State Electronics - Volume 60, Issue 1, June 2011, Pages 22–25