Subband structure and effective mass of relaxed and strained Ge (1 1 0) PMOSFETs

Effective mass and mobility of strained Ge (1 1 0) inversion layer in PMOSFET are studied theoretically in this paper. The strain condition considered in the calculations is the intrinsic strain resulting from growing the Ge layer on the (1 1 0) Si substrate. The quantum confinement effect resulting from the vertical effective electric field is incorporated into the k · p calculation. Various effective masses, such as quantization effective mass, mz, density of states effective mass, mDOS, and conductivity mass, mC, as well as the hole mobility of strained Ge (1 1 0) inversion layer for PMOS under substrate strain and various effective electric field strengths are all investigated.

Research highlights
► Simple and useful effective mass information for quasi two dimension hole transport.
► A new guideline for a novel CMOS design.
► Impact of (1 1 0) surface orientation on hole transport in a Ge inversion layer.