کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
748339 1462266 2011 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Ge1−xSnx stressors for strained-Ge CMOS
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Ge1−xSnx stressors for strained-Ge CMOS
چکیده انگلیسی

In this paper, we propose the fabrication of whole strained Ge complementary metal–oxide-semiconductor (CMOS) with Ge1−xSnx materials as stressors to outperform the state-of-the-art uniaxial compressive strained Si CMOS. Ge1−xSnx materials have larger lattice constant than that of Ge, which can apply the strain into Ge channel region.Firstly, we have demonstrated p-type doped Ge1−xSnx growth by using either B implantation or in situ Ga doping technique. In the B-implanted Ge1−xSnx formation case, fully strained B-doped Ge1−xSnx layers with no Sn precipitation can be obtained even after solid phase epitaxial regrowth (SPER). However, the serious dislocation generation in the layer was occurred during SPER. This is caused by the point defects introduced by B implantation. In order to avoid this crystal damage, we have also demonstrated in situ Ga-doped Ge1−xSnx growth. In this case, we can achieve fully strained Ga-doped Ge1−xSnx growth without Sn precipitation and any defect generation.Secondary, we have demonstrated the formation of Ni(Ge1−ySny) layers for metal/semiconductor contact and investigated the crystalline qualities. The formation of polycrystalline Ni(Ge1−ySny) layers on Ge1−xSnx layers with Sn contents ranging from 2.0% to 6.5% after annealing at from 350 °C to 550 °C can be achieved. Additionally, in the case of the Ni/Ge1−xSnx/Ge sample with a Sn content of 3.5%, an epitaxial Ni2(Ge1−ySny) layer on a Ge1−xSnx layer was formed. However, the surface roughness due to the agglomeration of Ni(Ge1−xSnx) increases with increasing the Sn content and the annealing temperature. Therefore, a low thermal budget must be required for the formation of Ni(Ge1−xSnx) with high Sn content.

Research highlights
► GeSn materials have potential for strained Ge pMOSFET.
► p-type doped GeSn growth and Ni(GeSn) formation which can be used in the source/drain area have been successfully demonstrated.
► These layer qualities strongly depends on thermal budget.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 60, Issue 1, June 2011, Pages 53–57
نویسندگان
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