کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
748387 | 894758 | 2008 | 6 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Characterization of cadmium telluride thin films fabricated by two-source evaporation technique and Ag doping by ion exchange process Characterization of cadmium telluride thin films fabricated by two-source evaporation technique and Ag doping by ion exchange process](/preview/png/748387.png)
Cadmium telluride (CdTe) thin films were deposited onto scratch free transparent glass substrates by two-source evaporation technique, using Cd and Te as two different evaporants. In the next step films were heated under vacuum at 400 °C for 1 h and dipped in AgNO3–H2O solution at room temperature. These films were again heated under vacuum for 1 h at 400 °C to obtain maximum Ag diffusion. The samples were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), electrically i.e. DC electrical resistivity by van der Pauw method at room temperature, dark conductivity, activation energy analysis as a function of temperature by two-probe method under vacuum and optically by Lambda 900 UV/VIS/NIR spectrophotometer. The EDX results showed an increase of Ag content in the samples by increasing immersion time of the CdTe films in the solution.
Journal: Solid-State Electronics - Volume 52, Issue 2, February 2008, Pages 205–210