کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
748387 894758 2008 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Characterization of cadmium telluride thin films fabricated by two-source evaporation technique and Ag doping by ion exchange process
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Characterization of cadmium telluride thin films fabricated by two-source evaporation technique and Ag doping by ion exchange process
چکیده انگلیسی

Cadmium telluride (CdTe) thin films were deposited onto scratch free transparent glass substrates by two-source evaporation technique, using Cd and Te as two different evaporants. In the next step films were heated under vacuum at 400 °C for 1 h and dipped in AgNO3–H2O solution at room temperature. These films were again heated under vacuum for 1 h at 400 °C to obtain maximum Ag diffusion. The samples were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), electrically i.e. DC electrical resistivity by van der Pauw method at room temperature, dark conductivity, activation energy analysis as a function of temperature by two-probe method under vacuum and optically by Lambda 900 UV/VIS/NIR spectrophotometer. The EDX results showed an increase of Ag content in the samples by increasing immersion time of the CdTe films in the solution.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 52, Issue 2, February 2008, Pages 205–210
نویسندگان
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