کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
748412 | 894759 | 2007 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The obtaining of Al-Ti10W90-Si(n) Schottky diodes and investigation of their interface surface states density
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موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Electrical characteristics of Schottky diodes (SD) are rather sensitive to the state of the metal-semiconductor interface. For obtaining the amorphous metal film of a Ti10W90 alloy on a silicon substrate the magnetron sputtering method has been used. The microstructure of the films has been investigated using the X-ray method. The sandwich structure of Al-Ti10W90-Si(n) was obtained in a uniform work cycle. The diode matrix contained 14 diodes the areas of which changed from 1 Ã 10â6 cm2 to 14 Ã 10â6 cm2. For the study of the electro-physical parameters for the forward (If = Is exp αV) and reverse (Ir = Is exp αâV) current-voltage (I-V) characteristics in the temperature range of 300-458 K (αmax = 37, 48 Vâ1 and αmaxâ = 1.78 Vâ1, respectively) were measured. The analysis of the I-V characteristics has shown that the surface states take part in a current transfer. Using the current-voltage characteristics the method of calculation of surface states distribution in the silicon band gap has been developed. The obtained surface states density and their energy distribution has shown the presence of discrete surface states characteristic for tungsten and silicide of titanium in the band gap of silicon.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 51, Issue 8, August 2007, Pages 1096-1100
Journal: Solid-State Electronics - Volume 51, Issue 8, August 2007, Pages 1096-1100
نویسندگان
I.M. Afandiyeva, SH.G. Askerov, L.K. Abdullayeva, SH.S. Aslanov,