Thermal sensor employing ring oscillator composed of poly-Si thin-film transistors

We propose a thermal sensor employing a ring oscillator composed of poly-Si thin-film transistors (TFTs). First, temperature dependences of transistor characteristics are compared between n-type TFTs with self-aligned and offset gate structures. It is confirmed that the temperature dependence of the offset TFT is larger. Next, a ring oscillator is composed using the n-type offset TFTs. It is clarified that the temperature can be detected by measuring the oscillation frequency. We think that this kind of thermal sensor is available as a digital device.

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► We propose a thermal sensor employing a ring oscillator composed of poly-Si TFTs.
► Temperature dependence of transistor characteristics of n-type offset TFTs is larger than SA TFTs.
► A ring oscillator is composed using the offset TFTs.
► The temperature can be detected by measuring the oscillation frequency.
► This kind of thermal sensor is available as a digital device.