Characteristics and reliabilities on the Dicing before Grinding (DBG) process in nMOSFETs

This paper reports the characteristics and reliability of nMOSFETs using the DBG process under mechanical tensile strain. Under a 0.075% longitudinal tensile strain, the increment rates of Id,sat are 6.55% and 3.51% for 1 μm and 0.135 μm nMOSFET. The increment rate of Id,sat is decreased and saturated, when the gate length is in the sub-micron region. Good fatigue properties and reliability are obtained after dynamic, static bending strain and hot carrier stress under a 0.075% longitudinal tensile strain.

► Characteristics and reliabilities of nMOSFETs using DBG process under mechanical tensile strain are reported.
► Under a 0.075% longitudinal tensile strain, the increment rate of Id,sat is decreased and saturated, when the gate length is in the sub-micron region.
► The slightly improvement of HCS under tensile strain in nMOSFETs is due to reducing the gate current by higher effective mass and barrier height.
► Good fatigue properties are obtained after dynamic, static bending strain and hot carrier stress under a 0.075% longitudinal tensile strain.