کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
748579 | 1462254 | 2012 | 4 صفحه PDF | دانلود رایگان |
As the technological challenges in obtaining high power ultraviolet-C light emitting diodes (LEDs) on bulk AlN substrates are being overcome, the next challenge faced is the manufacturability. One of these challenges consists of introducing a 10 × 10 mm substrate into a fabrication facility that is processing 2” and larger diameter substrates. This has been successfully carried out using a standard visible LED production facility that is involved in high volume manufacturing of blue LEDs. By introducing specifications on the substrates, the epitaxial wafers, and the fabrication process, the establishment of a pilot production process with pathways to high volume manufacturing has been established.
► A manufacturable process for ultraviolet-C light emitting diodes on bulk aluminum nitride substrates has been demonstrated.
► Statistical variation of key process parameters has been shown.
► Statistical variation of key device metrics has been shown.
Journal: Solid-State Electronics - Volume 78, December 2012, Pages 127–130