Temperature impact on the tunnel fet off-state current components

In this work, the temperature impact on the off-state current components is analyzed through numerical simulation and experimentally. First of all, the band-to-band tunneling is studied by varying the underlap in the channel/drain junction, leading to an analysis of the different off-state current components. For pTFET devices, the best behavior for off-state current was obtained for higher values of underlap (reduced BTBT) and at low temperatures (reduced SRH and TAT). At high temperature, an unexpected off-state current occurred due to the thermal leakage current through the drain/channel junction. Besides, these devices presented a good performance when considering the drain current as a function of the drain voltage, making them suitable for analog applications.

► We study the temperature impact on the off-state current components.
► The best behavior for off-state current was obtained for higher values of underlap and at low temperatures.
► TFETs with higher values of underlap make the off-state region more temperature dependent.
► The analyzed TFETs presented a good performance for analog applications.