Quantitative evaluation of gettering efficiencies in device process after p-well formation

► We evaluated gettering efficiencies in device process after p-well formation. ► For evaluation of gettering efficiencies, we used the trace analysis of the 65Cu and 60Ni isotope. ► We identify the wafer with good gettering ability and investigate the major effects of gettering. ► p−/p+ epitaxial wafers have better gettering efficiency than other bulk silicon wafers.