کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
748597 | 1462256 | 2012 | 4 صفحه PDF | دانلود رایگان |
This paper presents the study of an interface preparation procedure in the source/drain regions of the active layer, prior to deposit the n+ a-Ge:H contact layer in the fabrication process of low-temperature a-SiGe:H thin-film transistors. The devices were fabricated on corning 1737 substrates at 200 °C. The improvement in metal–semiconductor interface by the interface preparation procedure was demonstrated. This interface improvement translates in higher mobility and better values of off-current, on/off-current ratio, subthreshold slope and threshold voltage.
► Interface preparation procedure leads to achieve a good quality device interfaces.
► Interface improvements translate in higher mobility and better TFT performance.
► Applied hydrogen plasma reduces the plasma-induced damage.
► Poor quality in device interfaces is obtained by higher overetching process.
Journal: Solid-State Electronics - Volume 76, October 2012, Pages 44–47