A formula for the central potential’s maximum magnitude in arbitrarily doped symmetric double-gate MOSFETs

We propose here a simple approximate, yet accurate, formula to easily calculate the maximum magnitude of the electric potential at the channel width’s midpoint of symmetric Double Gate (DG) MOSFETs with any arbitrary body doping concentration. According to it this maximum magnitude depends only on the body’s thickness and doping concentration, apart from its usual dependence on quasi-Fermi level splitting. The new formula allows to easily determine the critical body thickness value above which any arbitrarily doped symmetric DG MOSFET can be satisfactorily modeled using a conventional bulk MOSFET model. This critical value depends only on body doping concentration, The proposed approximate formula also constitutes a useful means to quickly calculate initial values in iterative numerical calculations of doped symmetric DG MOSFET models.

► Calculates maximum central potential in doped body symmetric DG MOSFETs.
► Covers unintentionally doped and hypothetically intrinsic cases.
► Defines critical body thickness above which DG MOSFET behaves as bulk device.
► Useful to calculate initial values in iterative numerical calculations.