Extraction of trap energy and location from random telegraph noise in gate leakage current (Ig RTN) of metal–oxide semiconductor field effect transistor (MOSFET)

Study of random telegraph noise in gate leakage current (Ig RTN) through thin gate oxide (2.6 nm) as well as drain current random telegraph noise (Id RTN) has been conducted in MOSFET. RTN having two discrete current levels was observed in gate leakage current. Capture and emission time constants of Ig fluctuation were found to depend on drain voltage as well as gate voltage. Capture time showed an increase while emission time showed a decrease with respect to gate voltage. New equations for extracting trap locations and its energy level were derived. The oxide trap extracted from Ig fluctuation was observed to react with the gate and have a deep trap energy level from the conduction band edge of oxide.