The relationship between hydrogen atoms and photoluminescent properties of porous silicon prepared by different etching time

In this paper, the photoluminescence of as-prepared porous silicon were investigated. The visible light emission is associated with surface defects states of porous silicon. The hydrogen atoms on porous silicon surface can passivate irradiative centers and lead to the increase of emission intensity, which can be proved by the microwave-detected photoconductivity decay measurements.