Light triggered 4H–SiC thyristors with an etched guard ring assisted JTE

In this paper, an original termination, the etched guard ring assisted junction termination extension (JTE), is demonstrated on 4H–SiC light triggered thyristors. The termination structure, designed with finite element simulations, is detailed and particular attention is paid to the sensitivity to etching depth uncertainties. The fabrication processes and the electrical characterization of the devices are described. A blocking voltage of 6.3 kV is attained, validating the principle of the termination. Switching and quasi static on-state measurements are also performed to investigate the functionality of the thyristors.

► Design of an original edge termination: etched guard ring assisted JTE.
► Fabrication of light triggered thyristor without ion implantation process.
► Best blocking voltage of 6.3 kV validating the principle of the termination.
► Optical switching and on-state characterization showing the device functionality.