کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
748664 | 1462259 | 2012 | 7 صفحه PDF | دانلود رایگان |
We report a simple and inexpensive way for the preparation of highly transparent ZnO thin films and their application as active layer in UV ray sensor devices. ZnO thin films were deposited on glass substrates by thermal evaporation of pure ZnO powder. The as-deposited films were then annealed at different temperatures (100, 200, 300 and 400 °C) for various time durations (5, 15, 25 and 35 min) to make optically transparent in the visible region. The films annealed at 300 °C for 15 min show very good visible transparency and other material properties. These films were used as the active material for Ag/ZnO/Ag UV sensor devices. The sensor devices are photo conductive type and only sensitive in the UV region of the electromagnetic spectrum. Maximum photo-current gain of the UV sensor device is ∼2. Possible sensing mechanism has been discussed.
► We have presented the tuning of optical, structural and electrical properties of ZnO thin films by thermal annealing.
► The optimized films have been applied in photoconductive type UV sensor devices as the active layer.
► The specialty of this work lies in the simplicity and cost effective fabrication process of sensor device.
Journal: Solid-State Electronics - Volume 73, July 2012, Pages 44–50