Temperature dependence of the transport properties of spin field-effect transistors built with InAs and Si channels

We study the transport properties of the Datta–Das spin field-effect transistor built on InAs and Si. First, we demonstrate that the amplitude of the magnetoresistance oscillations as a function of the band mismatch between the ferromagnetic contacts and the semiconductor channel made of InAs decreases dramatically with increasing temperature. A shorter InAs channel is needed to create an InAs-based SpinFET which will operate at higher temperatures. Second, we show that the [1 0 0] orientation of the fin is preferable for silicon SpinFETs due to stronger modulation of the conductance as a function of spin–orbit interaction and magnetic field. Short silicon fins can be used for current modulation as a function of the conduction band mismatch between the channel and the ferromagnetic contacts only at relatively low temperatures. In contrast, longer silicon channels allow a TMR modulation at room temperature by changing the strength of the spin–orbit interaction through the gate bias.

► We study the transport properties of the Datta–Das transistor built on InAs and Si.
► A shorter channel is needed to create an InAs-based spin field-effect transistor.
► We show that the [1 0 0] orientation of the fin is preferable for silicon transistors.