کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
748716 | 1462261 | 2012 | 7 صفحه PDF | دانلود رایگان |
Simulation results of electrostatics in Si cylindrical junctionless nanowire transistors with a homogenous channel are presented. Junctionless transistors including strain and arbitrary crystallographic orientations are studied. Size quantization effects are simulated by self-consistent solutions of the Poisson and Schrödinger equations. The 6 × 6 k·p method is employed for the calculation of the valence subband structure in a junctionless nanowire pFET. The influence of stress/strain and crystallographic channel orientation on to the electrostatics in terms of subband structure, charge density, and C–V curve is systematically studied.
► Simulation results of electrostatics in Si junctionless nanowire FETs are presented.
► Junctionless FETs including strain and arbitrary channel orientations are studied.
► Size quantization effects are simulated by self-consistent solutions of PE and SE.
► 6 × 6 k·p Model is used for the calculation of the valence subband structure in a pFET.
► Subband structure, charge density, C–V curve variation is systematically studied.
Journal: Solid-State Electronics - Volume 71, May 2012, Pages 30–36