کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
748759 1462263 2012 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
The enhancement of the deflection effect in InGaN/GaN light-emitting diodes with an ellipsoidal air tunnel
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
The enhancement of the deflection effect in InGaN/GaN light-emitting diodes with an ellipsoidal air tunnel
چکیده انگلیسی
This paper reports on the deflection effect of ellipsoidal air tunnel (EAT) array as an embedded deflector with low refractive index in InGaN/GaN light-emitting diodes (LEDs). Light extraction efficiency (LEE) for different height-to-width (h/w) ratios of air structure is analyzed by using an optical simulation program. Maximum LEE was obtained at a h/w ratio of 0.3, which corresponds to an ellipsoidal shape of the air structure. An LED structure with EAT array embedded between the sapphire substrate and the GaN epitaxial layer has been fabricated. The reflectance spectra measured over the entire visible spectral range showed reflectance modulations by the EAT structures. Moreover, the light-output power of the EAT-embedded LED was enhanced by 2.3 times compared to a conventional LED without EAT arrays. This could be attributed to the enhanced light deflection from EAT structures.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 69, March 2012, Pages 14-17
نویسندگان
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