Modeling the impact of junction angles in tunnel field-effect transistors

We develop an analytical model for a tunnel field-effect transistor (TFET) with a tilted source junction angle. The tunnel current is derived by using circular tunnel paths along the electric field. The analytical model predicts that a smaller junction angle improves the TFET performance, which is supported by device simulations. An analysis is also made based on straight tunnel paths and tunnel paths corresponding to the trajectory of a classical particle. In all the aforementioned cases, the same conclusions are obtained. A TFET configuration with an encroaching polygon source junction is studied to analyze the junction angle dependence at the smallest junction angles. The improvement of the subthreshold swing (SS) with decreasing junction angle can be achieved by using thinner effective oxide thickness, smaller band gap material and longer encroaching length of the encroaching junction. A TFET with a smaller junction angle on the source side also has an innate immunity against the degradation of the fringing field from the gate electrode via a high-k spacer. A large junction angle on the drain side can suppress the unwanted ambipolar current of TFETs.

► Modeling the dominant tunnel path length of tunnel-FETs for various junction angles.
► Large tunnel areas predominate the improvement for junction angles <15°.
► Smaller junction angles provide shorter tunnel paths and larger tunnel areas.
► Smaller junction angles results in TFETs with smaller subthreshold swing.
► Long source encroaching length includes tunnel areas and reduces subthreshold swing.