کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
748767 1462263 2012 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Symmetrical unified compact model of short-channel double-gate MOSFETs
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Symmetrical unified compact model of short-channel double-gate MOSFETs
چکیده انگلیسی

An explicit charge-based unified compact drain current model for lightly doped or undoped DG MOSFETs is proposed. It takes into account the short-channel effects, the subthreshold slope degradation, the drain-induced barrier lowering and the channel length modulation effects. The model is valid and continuous in all regimes of operation and it has been validated by developing a Verilog-A code and comparing the model results of transfer and output characteristics with simulation results exhibiting an average error of about 3%. The efficient solution of the Lambert W function for the inversion charge and the symmetry of the model make it suitable for circuit simulation and allow fast and accurate simulations of the transistor characteristics.

Figure optionsDownload as PowerPoint slideHighlights
► Presentation of an explicit charge-based unified compact drain current model for DG MOSFETs.
► Short-channel compatible.
► Valid and continuous in all regimes of operation.
► Suitable for circuit simulation.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 69, March 2012, Pages 55–61
نویسندگان
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