Location controlled high performance single-grain Ge TFTs on glass substrate

► We have fabricated high performance single-grain Ge TFT under 600 °C. ► Excimer laser annealing of Si at S/D improves on-off ratio of Ge TFT. ► Interface between Ge and oxide is improved by excimer laser crystallization. ► Tensile stress inside Ge channel improves the field effect mobility.