کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
748777 894789 2009 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
The charge transport mechanism in silicon nitride: Multi-phonon trap ionization
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
The charge transport mechanism in silicon nitride: Multi-phonon trap ionization
چکیده انگلیسی

The charge transport mechanism in amorphous silicon nitride, Si3N4, was experimentally examined to compare measured data with theoretical calculations made within the Frenkel model and the multi-phonon model of trap ionization. A good agreement between the experimental data and theoretical predictions could be achieved assuming the multi-phonon mechanism to be in effect. The widely accepted Frenkel model, although capable of explaining the measured data, fails to yield realistic values of the electron tunnel mass and attempt-to-escape factor.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 53, Issue 3, March 2009, Pages 251–255
نویسندگان
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